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Bulletin I2188 12/04
QUIETIR Series 10ETF12PBF
FAST SOFT RECOVERY RECTIFIER DIODE
Lead-Free ("PbF" suffix)
VF trr
< 1.33V @ 10A = 80ns
VRRM = 1200V
Description/ Features
The 10ETF12PBF fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met.
Major Ratings and Characteristics Characteristics
IF(AV) Sinusoidal waveform VRRM IFSM VF trr TJ @ 10 A, TJ = 25C @ 1A, 100A/s
Package Outline Units
A V A V ns C
Values
10 1200 160 1.33 80 - 40 to 150
TO-220AC
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10ETF12PBF QUIETIR Series
Bulletin I2188 12/04
Voltage Ratings
Part Number
10ETF12
VRRM , maximum peak reverse voltage V
1200
VRSM , maximum non repetitive peak reverse voltage V
1300
IRRM 150C mA
4
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IFSM It
2
10ETF..
10 160 185 128 180
Units
A A A2s A s
2
Conditions
@ TC = 125 C, 180 conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied
Max. Peak One Cycle Non-Repetitive Surge Current Max. I t for fusing
2
I t
2
Max. I t for fusing
2
1800
Electrical Specifications
Parameters
VFM rt IRM Max. Forward Voltage Drop Forward slope resistance
10ETF..
1.33 22.9 0.96 0.1 4
Units
V m V mA
Conditions
@ 10A, TJ = 25C TJ = 150C
VF(TO) Threshold voltage Max. Reverse Leakage Current
TJ = 25 C TJ = 150 C
VR = rated V RRM
Recovery Characteristics
Parameters
trr Irr Qrr S Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Typical Snap Factor
10ETF..
310 4.7 1.05 0.6
Units
ns A C
Conditions
IF @ 10Apk @ 25A/ s @ 25C
2
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10ETF12PBF QUIETIR Series
Bulletin I2188 12/04
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
10ETF..
- 40 to 150 - 40 to 150 1.5 62 0.5 2 (0.07) Min. Max. 6 (5) 12 (10)
Units
C C C/W C/W C/W g (oz.) Kg-cm (Ibf-in)
Conditions
RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Marking Device
Maximum Allowable Case Temperature (C) 150 145 140 135 130 30 125 120 115 60 90 120 180 0 2 4 6 8 10
Cond uction Angle
DC operation
Mounting surface , smooth and greased
TO-220AC 10ETF12
10ET S F.. eries R thJC (DC) = 1.5 C/ W
JEDEC
Maximum Allowa ble Case T emperature (C)
150 145 140 135 130 30 125 120 115 60
10E TF.. S eries R thJC (DC) = 1.5 C/ W
Conduc tion Period
90 120 180 12 DC 14 16
12
0
2
4
6
8
10
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average F orward Power Los (W) s
Fig. 2 - Current Rating Characteristics
Ma ximum Average Forward Power Loss (W) 24 20 16 12 RMS Limit 8 4 0
Conduction Period
16 14 12 10 8 6 4 2 0 0 2
180 120 90 60 30 RMS Limit
DC 180 120 90 60 30
Conduction Angle
10.T S F.. eries T J = 150C 4 6 8 10
10ET S F.. eries TJ = 150C 0 2 4 6 8 10 12 14 16
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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10ETF12PBF QUIETIR Series
Bulletin I2188 12/04
Peak Half S Wave Forward Current (A) ine
Peak Half Sine Wave F orward Current (A)
180 160 140 120 100 80 60 40 1
At Any Rated Load Condition And With Rated V ollowing S urge. RRM Ap plied F
200 180 160 140 120 100 80 60 40 0.01
Initial T = 150C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Maximum Non Repetitive S urge Current VersusPulse T rain Duration.
Initial T = 150C J No Voltage R eapp lied R ated VRRM R eapplied
10E F S T .. eries
10ET .. S F eries 0.1 Pulse T rain Duration (s) 1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000 Instantaneous F orward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
TJ= 25C 100 TJ= 150C
10
10ET S F.. eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous F orward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Reverse R ecovery T ime - T (s) rr
Maximum R evers R e ecovery T ime - T (s) rr
0.6 0.5 0.4 0.3 0.2 0.1 0
I FM = 10 A 8A 5A 2A 1A
0.8 10ET .. S F eries TJ = 150 C 0.6
10ET S F.. eries TJ = 25 C
0.4
I FM = 10 A 8A 5A 2A 1A
0.2
0
40
80
120
160
200
0
0
40
80
120
160
200
Rate Of F Of F all orward Current - di/ dt (A/ s)
R ate Of F Of Forwa rd Current - di/ dt (A/ s) all
Fig. 8 - Recovery Time Characteristics, TJ = 25C
Fig. 9 - Recovery Time Characteristics, TJ = 150C
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10ETF12PBF QUIETIR Series
Bulletin I2188 12/04
Maximum R everse R ecovery Charge - Qrr (C)
Maximum Revers R e ecovery Charge - Qrr (C)
2 10ET S F.. eries TJ = 25 C
I FM = 10 A
5 10ET S F.. eries TJ = 150 C 4
8A I FM = 10 A
1.6
8A
1.2
5A
3
5A
0.8
2A
2
2A
0.4
1A
1
1A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/ dt (A/ s)
R ate Of F Of Forward Current - di/ dt (A/ s) all
Fig. 10 - Recovery Charge Characteristics, TJ = 25C
Maximum R everse R ecovery Current - Irr (A) 20 10ET .. S F eries TJ = 25 C 16
I FM = 10 A 8A 5A 2A
Fig. 11 - Recovery Charge Characteristics, TJ = 150C
Maximum R evers R e ecovery Current - Irr (A) 25 10ET S F.. eries TJ = 150 C 20
8A I FM = 10 A
12
15
5A 2A
8
1A
10
1A
4
5
0
0
40
80
120
160
200
0
0
40
80
120
160
200
R ate Of F Of Forward Current - di/ dt (A/ s) all
Rate Of Fall Of Forward Current - di/ dt (A/ s)
Fig. 12 - Recovery Current Characteristics, TJ = 25C
T ransient T hermal Impedanc e Z thJC (C/W) 10
Fig. 13 - Recovery Current Characteristics, TJ = 150C
S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
0.1
0.01 S ingle Pulse 0.001 0.001 10E F.. S T eries
0.01
0.1 S quare Wave Pulse Duration (s)
1
10
Fig. 14 - Thermal Impedance ZthJC Characteristics
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10ETF12PBF QUIETIR Series
Bulletin I2188 12/04
Outline Table
10.54 (0.41) MAX. 2 3.78 (0.15) 3.54 (0.14) 15.24 (0.60) 14.84 (0.58) 1 14.09 (0.55) 13.47 (0.53) 3 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) 2.89 (0.11) 2.64 (0.10) 0.10 (0.004) 2.92 (0.11) 2.54 (0.10) TERM 2 DIA. 6.48 (0.25) 6.23 (0.24) 2 1.32 (0.05) 1.22 (0.05)
Base Cathode
2
1 4.57 (0.18) 4.32 (0.17)
3
0.61 (0.02) MAX.
Cathode
1
3
Anode
5.08 (0.20) REF.
Dimensions in millimeters and inches
Part Marking Information
IRMX Assembly Line EXAMPLE: THIS IS A 10ETF12 LOT CODE 1789 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO
PART NUMBER
DATE CODE ASSEMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-FREE
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10ETF12PBF QUIETIR Series
Bulletin I2188 12/04
Ordering Information Table
Device Code
10
1 1 2 3 4 5 6 6 -
E
2
T
3
F
4
12
5
PbF
6
Current Rating (10 = 10A) Circuit Configuration: E = Single Diode Package: T = TO-220AC Type of Silicon: F = Fast Soft Recovery Rectifier Voltage Rating (12 = 1200V) none = Standard Production PbF = Lead-Free
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/04
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